HAYNES-SHOCKLEY EXPERIMENT

HAYNES-SHOCKLEY EXPERIMENT  experiment of Haynes-Shockley it allows to measure the
drift mobility of electrons and holes in semiconductors. It is
an experiment with great educational value, because it allows
direct investigation of the drift velocity, of the diffusion process
and of the recombination of excess charge carriers.
In our new setup the excess carriers are optically injected
(using internal photoelectric effect) avoiding the need of a
reliable point-contact emitter